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MURS120T3G Mosfet Power Transistor Rectifiers 200V 1A Ultrafast

Price Negotiable
Price: Contact us
MOQ: Contact us
Delivery Time: The goods will be shipped within 3 days once received fund
Brand: ON
Product Description

MURS120T3G Mosfet Power Transistor Rectifiers 200V 1A Ultrafast

 

Features

  • Small Compact Surface Mountable Package with J−Bend Leads

  • Rectangular Package for Automated Handling

  • High Temperature Glass Passivated Junction

  • Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)

  • NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

     

Mechanical Characteristics:

  • Case: Epoxy, Molded

  • Weight: 95 mg (Approximately)

  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

  • Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds

    • Polarity: Polarity Band Indicates Cathode Lead

    • ESD Rating:

      ♦ HumanBodyModel=3B(>8kV) ♦ MachineModel=C(>400V)

MAXIMUM RATINGS

Rating

Symbol

MURS/SURS8/NRVUS

Unit

105T3

110T3

115T3

120T3

140T3

160T3

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

VRRM VRWM VR

50

100

150

200

400

600

V

Average Rectified Forward Current

IF(AV)

1.0 @ TL = 155°C 2.0 @ TL = 145°C

1.0 @ TL = 150°C 2.0 @ TL = 125°C

A

Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

40

35

A

Operating Junction Temperature

TJ

*65 to +175

°C

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company ChongMing Group (HK) Int'l Co., Ltd
Location Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person Doris Guo

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