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CSD16556Q5B Mosfet Power Transistor MOSFET 25V NexFET N Ch Pwr MosFET

Price Negotiable
Price: Contact us
MOQ: Contact us
Delivery Time: The goods will be shipped within 3 days once received fund
Brand: Ti
Product Description

CSD16556Q5B Mosfet Power Transistor MOSFET 25V NexFET N Ch Pwr MosFET
 
1 Features

  • Extremely Low Resistance
  • Ultralow Qg and Qgd

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 5-mm × 6-mm Plastic Package
     

2 Applications

  • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems

  • Optimized for Synchronous FET Applications
     

3 Description
This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFETTM power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Absolute Maximum Ratings

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

25

V

Qg

Gate Charge Total (4.5 V)

36

nC

Qgd

Gate Charge Gate-to-Drain

12

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V

1.2

VGS =10V

0.9

VGS(th)

Threshold Voltage

1.4

V

Device

Media

Qty

Package

Ship

CSD16556Q5B

13-Inch Reel

2500

SON 5 x 6 mm Plastic Package

Tape and Reel

   

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company ChongMing Group (HK) Int'l Co., Ltd
Location Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person Doris Guo

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