SI7139DP-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs PowerPAK SO-8

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

Qg (TYP.)

-30

0.0055 at VGS = -10 V

-40 d

49.5 nC

0.0090 at VGS = -4.5 V

-40 d

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC =25°C

ID

-40 d

A

TC =70°C

-40 d

TA =25°C

-22.4 a, b

TA =70°C

-17.9 a, b

Pulsed Drain Current

IDM

-70

Continuous Source-Drain Diode Current

TC =25°C

IS

-40 d

TA =25°C

-4.5 a, b

Avalanche Current

L = 0.1 mH

IAS

30

Single-Pulse Avalanche Energy

EAS

45

mJ

Maximum Power Dissipation

TC =25°C

PD

48

W

TC =70°C

30

TA =25°C

5 a, b

TA =70°C

3.2 a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

Soldering Recommendations (Peak Temperature) e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient a, c

t  10 s

RthJA

20

25

°C/W

Maximum Junction-to-Case

Steady State

RthJC

2.1

2.6