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SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8

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Price: Contact us
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Delivery Time: The goods will be shipped within 3 days once received fund
Brand: Ti
Product Description

SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8

 

FEATURES

  • TrenchFET® power MOSFETs
  • Material categorization:

for definitions of compliance please see www.vishay.com/doc?99912

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

-60

0.0145 at VGS = -10 V

-14.4

0.0190 at VGS = -4.5 V

-12.6

 

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

10 s

STEADY STATE

UNIT

Drain-Source Voltage

VDS

-60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C) a

TA =25°C

ID

-14.4

-8.6

A

TA =70°C

-11.5

-6.9

Pulsed Drain Current

IDM

-60

Continuous Source Current (Diode Conduction) a

IS

-4.5

-1.6

Avalanche Current

L = 0.1 mH

IAS

50

Single Pulse Avalanche Energy

EAS

125

mJ

Maximum Power Dissipation a

TA =25°C

PD

5.4

1.9

W

TA =70°C

3.4

1.2

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Soldering Recommendations (Peak Temperature) b, c

 

260

 

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient a

t  10 s

RthJA

18

23

°C/W

Steady State

52

65

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1

1.3

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Company ChongMing Group (HK) Int'l Co., Ltd
Location Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person Doris Guo

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