2SC5171 Audio Power Amplifier IC Transistor Silicon NPN Epitaxial Type 200 MHz

Price Negotiable

Price: Negotiate

MOQ: 10pcs

Delivery Time: 1-3Days

Brand: TOSHIBA

Product Description

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications

FEATURES

• High transition frequency: fT = 200 MHz (typ.)

• Complementary to 2SA1930

Electrical Characteristics (Tc = 25°C)

Characteristics	Symbol	Test Condition	Min	Typ.	Max	Unit
Collector cut-off current	ICBO	VCB = 180 V, IE = 0	―	―	5.0	μA
Emitter cut-off current	IEBO	VEB = 5 V, IC = 0	―	―	5.0	μA
Collector-emitter breakdown voltage	V (BR) CEO	IC = 10 mA, IB = 0	180	―	―	V
DC current gain	hFE (1)	VCE = 5 V, IC = 0.1 A	100	―	320
DC current gain	hFE (2)	VCE = 5 V, IC = 1 A	50	―	―
Collector-emitter saturation voltage	VCE (sat)	IC = 1 A, IB = 0.1 A	―	0.16	1.0	V
Base-emitter voltage	VBE	VCE = 5 V, IC = 1 A	―	0.68	1.5	V
Transition frequency	fT	VCE = 5 V, IC = 0.3 A	―	200	―	MHz
Collector output capacitance	Cob	VCB = 10 V, IE = 0, f = 1 MHz	―	16	―	pF

Absolute Maximum Ratings (Tc = 25°C)

Characteristics		Symbol	Rating	Unit
Collector-base voltage		VCBO	180	V
Collector-emitter voltage		VCEO	180	V
Emitter-base voltage		VEBO	5	V
Collector current		IC	2	A
Base current		IB	1	A
Collector power dissipation	Ta = 25°C	PC	2.0	W
Collector power dissipation	Tc = 25°C	PC	20	W
Junction temperature		Tj	150	°C
Storage temperature range		Tstg	−55 to 150	°C