High Frequency Mosfet Power Transistor For Telecom / Industrial Use IRLR7843TRPBF
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use
IRLR7843PbF IRLU7843PbF
Description
Power MOSFET Selection for Non-Isolated DC/DC Converters
Absolute Maximum Ratings
|
Parameter |
Max. |
Units |
|
|
VDS |
Drain-to-Source Voltage |
30 |
V |
|
VGS |
Gate-to-Source Voltage |
± 20 |
|
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
161f |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
113f |
|
|
IDM |
Pulsed Drain Current c |
620 |
|
|
PD @TC = 25°C |
Maximum Power Dissipation g |
140 |
W |
|
PD @TC = 100°C |
Maximum Power Dissipation g |
71 |
|
|
Linear Derating Factor |
0.95 |
W/°C |
|
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to+175 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Features
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage and Current
Applications
l High Frequency Synchronous Buck Converters for Computer Processor Power
l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
l Lead-Free
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