MOSFET Transistors TO-3P TIP147 10A 100V PNP DarliCM GROUPon Bipolar Power Transistor

  TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

Description

The devices are manufactured in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Features

Designed for general-purpose amplifier and low speed switching applications.

• Collector-Emitter sustaining voltage
VCEO (sus) = 60V (Minimum) - TIP140, TIP145
= 80V (Minimum) - TIP141, TIP146
= 100V (Minimum) - TIP142, TIP147
• Collector-Emitter saturation voltage

VCE (sat) = 2.0V (Maximum) at IC = 5.0A
• Monolithic construction with Built-in Base-Emitter shunt resistor.

TIP142   
TIP147

TIP142T
TIP147T

TIP42CTU       ON / FSC
TIP41CTU       ON / FSC

TIP42C      ST
TIP41C      ST

The DarliCM GROUPon Bipolar Power Transistor is designed for general purpose amplifier and low frequency switching applications.

The TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) are complementary devices.