200V 50A Metal Oxide TO247 N Channel Power Mosfet IRFP260MPBF

IRFP260MPBF  N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3

FEATURES

Type : MOSFETS-Single

Packaging :Tube

Part state: ACTIVE

FET type : N - Channel

Technology : MOSFET (Metal Oxide)

Drain-source voltage (VDSS) : 200V

Current - Continuous Drains (ID) (at 25°C): 50A (Tc)

Driving voltage (maximum RDS ON, minimum RDS ON) :10V

VGS (th) with different IDs (maximum) : 4V @ 250µA

Gate charge (Qg) at different VGs (Max.) : 234nC @ 10V

Input capacitance (CISS) at different VDS (maximum):  4057pF @ 25V

VGS (maximum) : ±20V

Power Dissipation (Maximum) : 300W (Tc)

RDS ON (Max.) : 40 mOhm @ 28A, 10V

Operating Temperature: -55°C ~ 175°C (TJ)

Install type: Through Hole

Supplier device package : TO-247AC

Package/enclosure : TO-247-3