TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode
TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): ∅ 3
• Peak waveleCM GROUPh: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector TEFT4300
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.
APPLICATIONS
• Infrared remote control units
• Free air transmission systems
• Infrared source for optical counters and card readers
| ORDERING INFORMATION | ||||
| ORDERING CODE | PACKAGING | REMARKS | PACKAGE FORMtr (ns) | |
| TSAL4400 | Bulk | MOQ: 5000 pcs, 5000 pcs/bulk | T-1 | |
Note
Test conditions see table “Basic Characteristics“
| PRODUCT SUMMARY | ||||
| COMPONENT | Ie (mW/sr) | ϕ (deg) | λP (nm) | tr (ns) |
| TSAL4400 | 30 | ± 25 | 940 | 800 |
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