MBR20100CTG Switchmode Power Rectifiers Schottky Barrier Rectifiers
MBR2080CT, MBR2090CT, MBR20100CT
SWITCHMODE™ Power Rectifiers
SCHOTTKY BARRIER RECTIFIERS
20 AMPERES
80−100 VOLTS
This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:
Features
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
MAXIMUM RATINGS (Per Diode Leg)
| Rating | Symbol | MBR | Unit | ||
| 2080CT | 2090CT | 20100CT | |||
|
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
80 | 90 | 100 | V |
|
Average Rectified Forward Current (Rated VR) TC = 133°C |
IF(AV) | 10 | A | ||
|
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C |
IFRM | 20 | A | ||
|
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
IFSM | 150 | A | ||
| Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) | IRRM | 0.5 | A | ||
| Operating Junction Temperature (Note 1) | TJ | -65 to +175 | °C | ||
| Storage Temperature | Tstg | -65 to +175 | °C | ||
| Voltage Rate of Change (Rated VR) | dv/dt | 10000 | V/μs | ||
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.
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