Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS
Price:
Negotiation
MOQ:
20pcs
Delivery Time:
1 Day
Product Description
Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS
• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )
Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T
Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Drain source voltage | VDS | -50 | V |
|
Drain-gate voltage RGS = 20 kΩ |
VDGR | -50 | |
| Gate source voltage | VGS | ± 20 | |
|
Continuous drain current TA = 39 °C |
ID | -1.1 | A |
|
DC drain current, pulsed TA = 25 °C |
IDpuls | -4.4 | |
|
Power dissipation TA = 25 °C |
Ptot | 1.8 | W |
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Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo