AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor
Price:
negotiation
MOQ:
100pcs
Delivery Time:
1 Day
Brand:
ALPHA
Product Description
AO3400A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V
ID = 5.7A (VGS = 10V)
RDS(ON) < 26.5mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 48mΩ (VGS = 2.5V)
| Thermal Characteristics | |||||
| Parameter | Symbol | Typ | Max | Units | |
| Maximum Junction-to-Ambient A | t ≤ 10s | RθJA | 70 | 90 | °C/W |
| Maximum Junction-to-Ambient A | Steady-State | 100 | 125 | °C/W | |
| Maximum Junction-to-Lead C | Steady-State | RθJL | 63 | 80 | °C/W |
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Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo