General Purpose Power Mosfet Transistor ( NPN Silicon ) Pb−Free Packages MMBT3904LT1G
Price:
Negotiation
MOQ:
5pcs
Delivery Time:
1 Day
Brand:
ONSEMI
Product Description
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
| Rating | Symbol | Value | Unit |
| Collector−Emitter Voltage | VCEO | 40 | Vdc |
| Collector−Base Voltage | VCBO | 60 | Vdc |
| Emitter−Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current − Continuous | IC | 200 | mAdc |
THERMAL CHARACTERISTICS
| Characteristic | Symbol | Max | Unit |
|
Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C |
PD | 225 1.8 | mW mW/°C |
| Thermal Resistance, Junction−to−Ambient | RJA | 556 | °C/W |
|
Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C |
PD |
300 2.4 |
mW mW/°C |
| Thermal Resistance, Junction−to−Ambient | RJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. F
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo