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TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor

Price Negotiable
Price: Negotiate
MOQ: 20pcs
Delivery Time: 1 day
Product Description

 

TOSHIBA Photocoupler GaAs Ired&Photo−Transistor

TLP733, TLP734

 

Office Machine

Household Use Equipment

Solid State Relay

Switching Power Supply

 

The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

TLP734 is no−base internal connection for high−EMI environments.

 

  • Collector−emitter voltage: 55 V (min.)
  • Current transfer ratio: 50% (min.)                                   
    • Rank GB: 100% (min.)
  • UL recognized: UL1577, file no. E67349
  • BSI approved: BS EN60065: 1994
    • Certificate no. 7364
    • BS EN60950: 1992
    • Certificate no. 7365
  • SEMKO approved: SS4330784
    • Certificate no. 9325163, 9522142
  • Isolation voltage: 4000 Vrms (min.)
  • Option (D4) type
    • VDE approved: DIN VDE0884 / 06.92,
      • Certificate no. 74286, 91808
    • Maximum operating insulation voltage: 630, 890 VPK
    • Highest permissible over voltage: 6000, 8000 VPK

(Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”

 

 

                                            7.62 mm pich       10.16 mm pich

                                            standard type       TLP×××F type 

Creepage distance             : 7.0 mm (min.)      8.0 mm (min.)

Clearance                           : 7.0 mm (min.)      8.0 mm (min.)

Internal creepage path        : 4.0 mm (min.)      4.0 mm (min.)

Insulation thickness             : 0.5 mm (min.)      0.5 mm (min.) 

 

 

Maximum Ratings (Ta = 25°C)

                                  Characteristic   Symbol    Rating   Unit
 LED  Forward current      IF      60   mA
 Forward current derating (Ta ≥ 39°C)   ∆IF / °C     -0.7  mA / °C
 Peak forward current (100 µs pulse, 100 pps)     IFP       1    A
 Reverse voltage     VR       5    V
 Junction temperature      Tj      125   °C
Detector  Collectoremitter voltage    VCEO       55    V 
 Collectorbase voltage (TLP733)    VCBO       80    V
 Emittercollector voltage    VECO        7    V
 Emitterbase voltage (TLP733)    VEBO        7    V
 Collector current      IC       50   mA
 Power dissipation     PC      150   mW
 Power dissipation derating (Ta ≥ 25°C)   ∆PC / °C      -1.5  mW / °C
 Junction temperature     Tj      125    °C
  Storage temperature range    Tstg    -55~125    °C
  Operating temperature range    Topr    -40~100    °C
  Lead soldering temperature (10 s)    Tsol       260    °C
  Total package power dissipation     PT       250   mW
  Total package power dissipation derating (Ta ≥ 25°C)   ∆PT / °C      -2.5  mW / °C
  Isolation voltage (AC, 1 min., R.H.≤ 60%)    BVS      4000   Vrms

 

 

Weight: 0.42 g

                Pin Configurations (top view)

 

               

           TLP733

           1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base

 

           TLP734

           1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc

 

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Company ChongMing Group (HK) Int'l Co., Ltd
Location Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person Doris Guo

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