AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet
Price:
Negotiation
MOQ:
20pcs
Delivery Time:
1 Day
Brand:
AOSMD
Product Description
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -30V
ID = -7 A (VGS = -10V)
RDS(ON) < 34mΩ (VGS = -10V)
RDS(ON) < 54mΩ (VGS = -4.5V)
General Description
The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications).
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
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Company
ChongMing Group (HK) Int'l Co., Ltd
Location
Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact Person
Doris Guo