MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
MJD112 (NPN)
MJD117 (PNP)
Complementary DarliCM GROUPon Power Transistors
DPAK For Surface Mount Applications
SILICON POWER TRANSISTORS
2 AMPERES
100 VOLTS
20 WATTS
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS
| Rating | Symbol | Max | Unit |
| Collector−Emitter Voltage | VCEO | 100 | Vdc |
| Collector−Base Voltage | VCB | 100 | Vdc |
| Emitter−Base Voltage | VEB | 5 | Vdc |
|
Collector Current − Continuous Peak |
IC |
2 4 |
Adc |
| Base Current | IB | 50 | mAdc |
|
Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
20 0.16 |
W W/°C |
|
Total Power Dissipation* @ TA = 25°C Derate above 25°C |
PD |
1.75 0.014 |
W W/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 | °C |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAMS
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
DPAK−3
CASE 369D−01
ISSUE B
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