MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
| Symbol | Parameter | BS170 | MMBF170 | Unit |
| VDSS | Drain-Source Voltage | 60 | V | |
| VDGR | Drain-Gate Voltage (RGS < 1MW) | 60 | V | |
| VGSS | Gate-Source Voltage | ± 20 | V | |
| ID |
Drain Current - Continuous - Pulsed |
500 | 500 | mA |
| 1200 | 800 | mA | ||
| PD |
Maximum Power Dissipation Derate Above 25°C |
830 | 300 | mW |
| 6.6 | 2.4 | mW/°C | ||
| TJ ,TSTG | Operating and Storage Temperature Range | -55 to 150 | °C | |
| TL | Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds | 300 | °C | |
| THERMAL CHARACTERISTICS | ||||
| RθJA | Thermal Resistacne, Junction-to-Ambient | 150 | 417 | °C/W |
Switching Test Circuit. Switching Waveforms.
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