SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET
SI4435DY
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Applications
· Power management
· Load switch
· Battery protection
Features
· –8.8 A, –30 V RDS(ON) = 20 mW @ VGS = –10 V
RDS(ON) = 35 mW @ VGS = –4.5 V
· Low gate charge (17nC typical)
· Fast switching speed
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
Absolute Maximum Ratings TA=25℃ unless otherwise noted
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID |
Drain Current – Continuous (Note 1a) – Pulsed |
–8.8 | A |
| –50 | |||
| PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 |
W |
| 1.2 | |||
| 1 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | –55 to +175 | °C |
Thermal Characteristics
| RθJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | °C/W |
| RθJA | Thermal Resistance, Junction-to-Ambient (Note 1c) | 125 | °C/W |
| RθJC | Thermal Resistance, Junction-to-Case (Note 1) | 25 | °C/W |
Package Marking and Ordering Information
| Device Marking | Device | Reel Size | Tape width | Quantity |
| SI4435DY | SI4435DY | 13’’ | 12mm | 2500 units |
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