FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET
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FQP30N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
| Symbol | Parameter | FQP30N06 | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
30 | A |
| 21.3 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 120 | A |
| VGSS | Gate-Source Voltage | ± 25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 280 | mJ |
| IAR | Avalanche Current (Note 1) | 30 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 7.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
79 | W |
| 0.53 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | 300 | °C |
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