STGW20NC60VD power mosfet module N-CHANNEL Very Fast PowerMESH IGBT
STGW20NC60VD
N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT
General Features
| TYPE | VCES | VCE(sat) (Max) @25°C | IC @100°C |
|---|---|---|---|
| STGW20NC60VD | 600 V | < 2.5 V | 30 A |
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOSSES INCLUDE DIODE RECOVERY ENERGY
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION UP TO 50 KHz
■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE
■ LOWER CRES /CIES RATIO
■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency applications.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
■ UPS
■ MOTOR DRIVERS
Absolute Maximum ratings
| Symbol | Parameter | Value | Symbol |
|---|---|---|---|
| VCES | Collector-Emitter Voltage (VGS = 0) | 600 | V |
| VECR | Reverse Battery Protection | 20 | V |
| VGE | Gate-Emitter Voltage | ± 20 | V |
| IC | Collector Current (continuous) at 25°C (#) | 60 | A |
| IC | Collector Current (continuous) at 100°C (#) | 30 | A |
| ICM (1) | Collector Current (pulsed) | 100 | A |
| If | Diode RMS Forward Current at TC = 25°C | 30 | A |
| PTOT | Total Dissipation at TC = 25°C | 200 | W |
| Derating Factor | 1.6 | W/°C | |
| Tstg | Storage Temperature | – 55 to 150 | °C |
| Tj | Operating Junction Temperature | – 55 to 150 | °C |
(1)Pulse width limited by max. junction temperature.
Stock Offer (Hot Sell)
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