NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = 15A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : VCEO=230V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SA1943/FJL4215.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
-- TO220F package, FJPF5200 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
| Symbol | Parameter | Ratings | Units |
| BVCBO | Collector-Base Voltage | 230 | V |
| BVCEO | Collector-Emitter Voltage | 230 | V |
| BVEBO | Emitter-Base Voltage | 5 | V |
| IC | Collector Current(DC) | 15 | A |
| IB | Base Current | 1.5 | A |
| PD |
Total Device Dissipation(TC=25°C) Derate above 25°C |
150 1.04 |
W W/°C |
| TJ, TSTG | Junction and Storage Temperature | - 50 ~ +150 | °C |
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
| Symbol | Parameter | Max | Units |
| RθJC | Thermal Resistance, Junction to Case | 0.83 | °C/W |
* Device mounted on minimum pad size
hFE Classification
| Classification | R | O |
| hFE1 | 55 ~ 110 | 80 ~ 160 |
Typical Characteristics
Package Dimensions
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