BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors
Thyristors
BT151 series
GENERAL DESCRIPTION
Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
| VDRM, VRRM | Repetitive peak off-state voltages | - | -500R 5001 | -650R 6501 | -800R 800 | V | |
| IT(AV) | Average on-state current | half sine wave; Tmb ≤ 109 ˚C | - | 7.5 | A | ||
| IT(RMS) | RMS on-state current | all conduction angles | - | 12 | A | ||
| ITSM | Non-repetitive peak on-state current | half sine wave; Tj = 25 ˚C prior to surge | - | ||||
| I2 t | I2 t for fusing | t = 10 ms t = 8.3 ms t = 10 ms | - | 100 110 50 | A A A2 s | ||
| dIT/dt | Repetitive rate of rise of on-state current after triggering | ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs | - | 50 | A/µs | ||
| IGM | Peak gate current | - | 2 | A | |||
| VGM | Peak gate voltage | - | 5 | V | |||
| VRGM | Peak reverse gate voltage | - | 5 | V | |||
| PGM | Peak gate power | - | 5 | W | |||
| PG(AV) | Average gate power | over any 20 ms period | - | 0.5 | W | ||
| Tstg | Storage temperature | -40 | 150 | ˚C | |||
| Tj | Operating junction temperature | - | 125 | ˚C | |||
MECHANICAL DATA
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
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