FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features
• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
| Symbol | Parameter | FQP10N20C | FQPF10N20C | Units |
| VDSS | Drain-Source Voltage | 200 | V | |
| ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.5 | 9.5 * | A |
| 6.0 | 6.0 * | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 38 | 38 * | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 210 | mJ | |
| IAR | Avalanche Current (Note 1) | 9.5 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 7.2 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
72 | 38 | W |
| 0.57 | 0.3 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | 300 | °C | |
* Drain current limited by maximum junction temperature.
Package Dimensions
TO-220
TO-220F
Stock Offer (Hot Sell)
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