KSP2907A

General Purpose Transistor

• Collector-Emitter Voltage: VCEO= 60V

• Collector Power Dissipation: PC (max)=625mW

• Refer to KSP2907 for graphs

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage -60 V

VCEO Collector-Emitter Voltage -60 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -600 mA

PC Collector Power Dissipation 625 mW

TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C

 DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.