SVF7N65F 650V N Channel MOSFET IC 1.4 Ohm 30MHz Through Hole
Introducing the High-Power SVF7N65F SI7N65F Transistor
Unleash the True Potential of Your Power Supply with Enhanced Technology
Transform your power supply with the exceptional SVF7N65F SI7N65F transistor, designed to bring you unparalleled benefits. Manufactured using state-of-the-art VAMOS process technology, this transistor comes with a strip-shaped cell design that offers superior switching performance, low on-resistance, and incredible avalanche breakdown tolerance.
Featuring a 7A, 650V, RDS(on) and low gate charge, this transistor boasts low reverse transfer capacitance, fast switching speed, and improved dv/dt capability. Ideal for use in AC-DC switching power supply, DC-DC power converter, and high-voltage H-bridge PWM motor drive, this product truly delivers. Upgrade your power supply with the SVF7N65F SI7N65F transistor today and experience the ultimate performance.
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Type Designator |
SVF7N65F |
|
Type of Transistor |
MOSFET |
|
Type of Control Channel |
N -Channel |
|
Maximum Power Dissipation (Pd) |
46 W |
|
Maximum Drain-Source Voltage |Vds| |
650 V |
|
Maximum Gate-Source Voltage |Vgs| |
30 V |
|
Maximum Drain Current |Id| |
7 A |
|
Maximum Junction Temperature (Tj) |
150 °C |
|
Rise Time (tr) |
48 nS |
|
Drain-Source Capacitance (Cd) |
98.6 pF |
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Maximum Drain-Source On-State Resistance (Rds) |
1.4 Ohm |
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Package |
TO220F |
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