FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247
High Performance MOSFET for Discrete Semiconductor Applications
Introducing the SuperFET FCH47N6 from onsemi in a TO-247-3 Package
Looking for a powerful and reliable MOSFET for your discrete semiconductor needs? Look no further than the SuperFET FCH47N6 from onsemi. Designed with cutting-edge MOSFET (Metal Oxide) technology, this N-Channel transistor delivers an impressive drain to source voltage of 600 V and a continuous drain current of 47A at 25°C.
With a maximum Rds On of just 70mOhm and a maximum gate charge of only 270 nC at 10V, the FCH47N6 provides exceptional efficiency, while the wide operating temperature range (-55°C to 150°C) ensures durability in even the most extreme conditions. This powerful MOSFET is compatible with through-hole mounting and comes in a TO-247-3 package. Don't miss out on the impressive power and reliability of the SuperFET FCH47N6 for discrete semiconductor applications.
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Category |
Discrete Semiconductor Products |
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Transistors - FETs, MOSFETs - Single |
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Package |
Tube |
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Part Status |
Obsolete |
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FET Type |
N-Channel |
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Technology |
MOSFET (Metal Oxide) |
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Drain to Source Voltage (Vdss) |
600 V |
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Current - Continuous Drain (Id) @ 25°C |
47A (Tc) |
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Drive Voltage (Max Rds On, Min Rds On) |
10V |
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Rds On (Max) @ Id, Vgs |
73mOhm @ 23.5A, 10V |
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Vgs(th) (Max) @ Id |
5V @ 250µA |
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Gate Charge (Qg) (Max) @ Vgs |
270 nC @ 10 V |
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Vgs (Max) |
±30V |
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Input Capacitance (Ciss) (Max) @ Vds |
8000 pF @ 25 V |
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FET Feature |
- |
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Power Dissipation (Max) |
417W (Tc) |
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Operating Temperature |
-55°C ~ 150°C (TJ) |
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Mounting Type |
Through Hole |
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Package / Case |
TO-247-3 |
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Base Product Number |
FCH47 |
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