FQP8N60C High-Performance MOSFETs

Experience unrivaled power with the FQP8N60C

The FQP8N60C is a high-performance MOSFET that delivers unparalleled power and performance for a wide range of electronic applications. With its low ON resistance and high current capacity, this MOSFET is designed to handle even the most demanding power requirements. At the heart of the FQP8N60C is a unique design that maximizes efficiency and minimizes both conduction and switching losses. This translates into improved performance and more reliable operation, even under extreme conditions.

Featuring a robust construction and high-quality materials, this MOSFET is built to last and withstand harsh environments. With its exceptional performance, the FQP8N60C is the go-to choice for designers and engineers looking to optimize their electronic systems. So if you're looking for a high-performance MOSFET that delivers unmatched power and performance, look no further than the FQP8N60C.

Overall, the product description focuses on the high-performance and reliability of FQP8N60C. A clear and concise header will attract the attention of potential customers and make the product stand out.

• Technology: Si
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 600 V
• Id - Continuous Drain Current: 7.5 A
• Rds On - Drain-Source Resistance: 1.2 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 4 V
• Qg - Gate Charge: 28 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 147 W
• Channel Mode: Enhancement
• Series: FQP8N60C
• Packaging: Tube
• Brand: onsemi / Fairchild
• Configuration: Single
• Fall Time: 64.5 ns
• Forward Transconductance - Min: 8.7 S
• Height: 16.3 mm
• Length: 10.67 mm
• Product Type: MOSFET
• Rise Time: 60.5 ns