Powerful MOSFET for High-Efficiency Electronics

IRF630 Description: Get Great Performance from Your Circuit

The IRF630 MOSFET is a powerful device that delivers high efficiency and superior performance for all your electronics needs. Designed to handle voltages up to 200V and currents up to 9.5A, this transistor is perfect for use in a wide range of applications, including power supplies, motor control, and audio amplifiers. Featuring a low gate charge and on-resistance, the IRF630 allows for faster switching and reduced power consumption, making it an ideal choice for energy-efficient designs. Additionally, the MOSFET's rugged construction and high-temperature resistance ensure reliable operation under even the most intense conditions. Whether you are an electronics enthusiast or professional, the IRF630 MOSFET is an excellent choice for your next project.

So why wait? Order yours today and experience the power and performance of this outstanding transistor for yourself.

Technical features:

• Technology: Si
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 200 V
• Id - Continuous Drain Current: 9 A
• Rds On - Drain-Source Resistance: 400 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 31 nC
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 75 W
• Channel Mode: Enhancement
• Series: IRF630
• Packaging: Tube
• Brand: STMicroelectronics
• Configuration: Single
• Forward Transconductance - Min: 3 S
• Height: 9.15 mm
• Length: 10.4 mm
• Product Type: MOSFET
• Rise Time: 15 ns