Shenzhen Huahao Gaosheng Technology Co., Ltd
                                                                                                           
Verified Supplier
3 Years
Since 2023
Menu

Monolithic Flash Memory IC 64KB FM1608-120 Bytewide Fram Memory

Price Negotiable
Price: negotiate
MOQ: Minimum Order Quantity: 10 PCS
Delivery Time: Within 3days
Brand: original
Product Description

FM1608-120 - RAMTRON INTERNATIONAL CORPORATION - 64KB BYTEWIDE FRAM MEMORY

 

Quick Detail:

 

64Kb Bytewide FRAM Memory

 

 

Description:

 

The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is

nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Its fast write and high write endurance make it superior to other types of nonvolatile memory.

In-system operation of the FM1608 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1608 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and

batteries or hybrid memory solutions.

These capabilities make the FM1608 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM1608 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.

 

 

Applications:

 

64K bit Ferroelectric Nonvolatile RAM

· Organized as 8,192 x 8 bits

· High endurance 10 Billion (1010) read/writes

· 10 year data retention at 85° C

· NoDelay™ write

· Advanced high-reliability ferroelectric process

Superior to BBSRAM Modules

· No battery concerns

· Monolithic reliability

· True surface mount solution, no rework steps

· Superior for moisture, shock, and vibration

· Resistant to negative voltage undershoots

SRAM & EEPROM Compatible

· JEDEC 8Kx8 SRAM & EEPROM pinout

· 120 ns access time

· 180 ns cycle time

· Equal access & cycle time for reads and writes

Low Power Operation

· 15 mA active current

· 20 mA standby current

Industry Standard Configuration

· Industrial temperature -40° C to +85° C

· 28-pin SOP or DIP

 

 

Specifications:

 

part no. FM1608
Manufacturer Ramtron International Corporation
supply ability 10000
datecode 10+
package 28-pin SOP or DIP
remark new and original stock

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Shenzhen Huahao Gaosheng Technology Co., Ltd
Location 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen
Contact Person Jack

Request A Quote

Please check your email address.
Your message must be at least 20 characters.