Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS

Name: Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
Brand: Shenzhen Huahao Gaosheng Technology Co., Ltd

Price Negotiable

Price: negotiate

MOQ: Minimum Order Quantity: 10 PCS

Delivery Time: Within 3days

Brand: VISHAY

Product Description

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK

FET Type:

N-channel

Operating Temperature:

-55°C ~ 150°C (TJ)

Package:

TO263-3 D2PAK

High Light:

n channel mosfet transistor

High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK

Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB