NPN Low Vcesat Mosfet Power Transistor PNP complement PBSS4160T

PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T

FEATURES
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency, reduces heat generation
• Reduces printed-circuit board area required
• Cost effective replacement for medium power transistor BCP55 and BCX55.

APPLICATIONS
• Major application segments:
– Automotive 42 V power
– Telecom infrastructure
– Industrial.
• Power management:
– DC-to-DC conversion
– Supply line switching.
• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps and LEDs)
– Inductive load driver (e.g. relays, buzzers and motors).

Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	250mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 5V
Power - Max	400mW
Frequency - Transition	220MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-236AB (SOT23)
Base Part Number	PBSS4160