BDD Electrode 5×5×0.55mm to 10×10×0.625mm | Boron-Doped Diamond Water Treatment Electrodes with 2200 W/mK Thermal Conductivity
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Product Description
BDD Electrodes for Advanced Water Treatment
High-performance boron-doped diamond electrodes designed for efficient degradation of complex organic pollutants in industrial wastewater treatment applications.
Industrial Applications
- Pharmaceutical and chemical waste treatment
- Petrochemical and coking byproducts processing
- Textile dyes and tanning effluent purification
- Landfill leachate and explosive residues removal
- Pulp/paper and distillery wastewater treatment
Product Specifications
| No. | Product Name | Substrates | Specs | Unit |
|---|---|---|---|---|
| 1 | BDD Electrode | Silicon, single side coated | 5×5×0.55mm | Piece |
| 2 | BDD Electrode | Silicon, double side coated | 5×5×1.0mm, 2 holes open | Piece |
| 3 | BDD Electrode | Silicon, double side coated | 5×5×1.0mm, 4 holes open | Piece |
| 4 | BDD Electrode | Silicon, double side coated | 8×6×1mm, Slotting | Piece |
| 5 | BDD Electrode | Silicon, double side coated | 7×7×0.5mm | Piece |
| 6 | BDD Electrode | Silicon, single side coated | 10×10×0.625mm | Piece |
| 7 | BDD Electrode | Silicon, double side coated | 10×10×0.625mm | Piece |
| 8 | BDD Electrode | Silicon, double side coated | 10×10×0.5mm | Piece |
Performance Advantages
Superior Efficiency: Outperforms PbO₂/Pt electrodes in organic degradation with 30% lower energy consumption
Eco-Safe Ozone Generation: Electrolyte-free ozone production for water purification
Extreme Durability: Resists corrosion in aggressive chemical environments
BDD Electrode technical specifications and dimensional details
Semiconductor Properties
- Ultrawide Bandgap: 5.47 eV (5× silicon's 1.1 eV) enables high-temperature/high-frequency device operation
- Thermal Conductivity: 2,200 W/mK (5× copper) reduces component size/weight in amplifiers & lasers
- Electron Mobility: Highest hole mobility among wide-bandgap materials, ideal for millimeter-wave ICs
Technical Metrics
- Johnson Index: 8,200 (vs. 410 for SiC)
- Baliga Index: Optimal for power switching systems
- Negative Electron Affinity: Enables cold cathode applications
CVD Polycrystalline Diamond Thermal Management
Advanced chemical vapor deposition polycrystalline diamond engineered for superior thermal management in high-power applications.
Key Features
- Adjustable Thermal Conductivity: 1,000-1,800 W/mK (9× silicon's 139 W/mK)
- Precision Engineering:
- Thickness Tolerance: ±25 μm
- Surface Flatness: <4 μm/cm
- Growth Side Finish: <100 nm Ra
- Nucleation Side Finish: <30 nm Ra
Standard Specifications
- Dimensions: Up to Ø65 mm (customizable)
- Thickness:
- Raw: 0.3-1.5 mm
- Polished: 0.2-1.0 mm
- Density: 3.5 g/cm³
- Young's Modulus: 1,000-1,100 GPa
Thermal Applications
- High-power laser diode mounts
- Integrated circuit heat spreaders
- Compact thermal solutions for aerospace electronics
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Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Shaper Diamond Technology Co., Ltd
Location
NO431 Ruifu, Shaoshan North Road, Yuhua District ,Changsha, Hunan Province, China
Contact Person
Alice Wang