CY7C1350G-133BGXC 4.5Mbit Synchronous SRAM 128K x 36 Parallel 133MHz 119-PBGA Memory IC
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Cypress Semiconductor Corp
Product Description
Advanced Synchronous Pipelined SRAM
The CY7C1350G is a high-performance 3.3V synchronous-pipelined burst SRAM engineered to deliver maximum data throughput with zero wait states during continuous read/write operations. Featuring advanced No Bus Latency™ (NoBL™) technology, this memory enables true back-to-back operations with data transfer on every clock cycle.
Key Performance Features
- No Bus Latency™ architecture eliminates wait states during read/write transitions
- 128K × 36 common I/O architecture with 4.5Mbit capacity
- 3.3V power supply with 2.5V/3.3V I/O compatibility
- Fast 2.8ns clock-to-output times (200MHz devices)
- Byte write capability for flexible data management
- Synchronous self-timed writes with clock enable (CEN) control
- Linear or interleaved burst order options
- Power-saving ZZ sleep mode for reduced energy consumption
- Available in Pb-free 119-ball BGA and 100-pin TQFP packages
Technical Specifications
| Manufacturer | Cypress Semiconductor |
| Memory Capacity | 4.5Mbit (128K × 36) |
| Memory Type | Synchronous SRAM |
| Operating Speed | 133MHz |
| Access Time | 4ns |
| Operating Voltage | 3.135V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C |
| Package Type | 119-PBGA (14x22) |
| Interface | Parallel |
Industry Compatibility: Pin-compatible and functionally equivalent to ZBT™ devices, making it ideal for seamless integration into existing high-performance computing and networking systems.
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao