IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon Solution Inc
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
ISSI, Integrated Silicon Solution Inc
Product Description
Product Details
DESCRIPTION
The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSIs advanced CMOS technology.
FEATURES
• 100 percent bus utilization• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply:
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | Memory ICs |
| Series | IS61NLP25636A |
| Type | Synchronous |
| Packaging | Tray Alternate Packaging |
| Unit-Weight | 0.023175 oz |
| Mounting-Style | SMD/SMT |
| Package-Case | 100-LQFP |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3.135 V ~ 3.465 V |
| Supplier-Device-Package | 100-TQFP (14x20) |
| Memory Capacity | 9M (256K x 36) |
| Memory-Type | SRAM - Synchronous |
| Speed | 200MHz |
| Data-Rate | SDR |
| Access-Time | 3.1 ns |
| Format-Memory | RAM |
| Maximum Operating Temperature | + 85 C |
| Operating temperature range | - 40 C |
| Interface-Type | Parallel |
| Organization | 256 k x 36 |
| Supply-Current-Max | 280 mA |
| Supply-Voltage-Max | 3.465 V |
| Supply-Voltage-Min | 3.135 V |
| Package-Case | TQFP-100 |
| Maximum-Clock-Frequency | 200 MHz |
Functional compatible component
Form,Package,Functional compatible component
| Manufacturer Part# | Description | Manufacturer | Compare |
| IS61NLP25636A-200TQI Memory |
256KX36 ZBT SRAM, 3.1ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | IS61NLP25636A-200TQLI vs IS61NLP25636A-200TQI |
| IS61NLP25636A-200TQL Memory |
ZBT SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100 | Integrated Silicon Solution Inc | IS61NLP25636A-200TQLI vs IS61NLP25636A-200TQL |
Descriptions
SRAM - Synchronous Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 100-TQFP (14x20)
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP
SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao