MT47H64M4BP-37E:B TR IC DRAM 256MBIT PAR 60FBGA Micron Technology Inc.
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Micron Technology Inc.
Product Description
Product Details
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banksMT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Alternate Packaging |
| Package-Case | 60-FBGA |
| Operating-Temperature | 0°C ~ 85°C (TC) |
| Interface | Parallel |
| Voltage-Supply | 1.7 V ~ 1.9 V |
| Supplier-Device-Package | 60-FBGA (8x12) |
| Memory Capacity | 256M (64Mx4) |
| Memory-Type | DDR2 SDRAM |
| Speed | 3.75ns |
| Format-Memory | RAM |
Descriptions
SDRAM - DDR2 Memory IC 256Mb (64M x 4) Parallel 267MHz 500ps 60-FBGA (8x12)
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao