PRODUCT DESCRIPTION

The SST38VF166 consists of three memory banks, 2 each 512K x16 bits sector mode flash EEPROM plus a 4K x16 bits word alterable E2PROM manufactured with SST’s proprietary, high performance SuperFlash Technology. The SST38VF166 erases and programs with a single power supply. The internal Erase/Program in the E2 bank is transparent to the user. The device conforms to (proposed) JEDEC standard pinouts for word-wide memories.

 

 

FEATURES:

• Single 2.7-3.6V Read and Write Operations
• Separate Memory Banks for Code or Data
– Simultaneous Read and Write Capability
• Superior Reliability
– Endurance:
E2 bank - 500,000 Cycles (typical)
Flash bank - 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current, Read: 15 mA (typical)
– Active Current, Concurrent Read while Write: 40 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode Current: 3 µA (typical)
• Fast Write Operation
– Flash Bank-Erase + Program: 8 sec (typical)
– Flash Block-Erase + Program: 500 ms (typical)
– Flash Sector-Erase + Program: 30 ms (typical)
– E2 bank Word-Write: 9 ms (typical)
• Fixed Erase, Program, Write Times
– Remain constant after cycling
• Read Access Time
– 70 ns
• Latched Address and Data
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• E2 Bank:
– Word-Write (Auto Erase before Program)
– Sector-Erase (32 Words) + Word-Program (same as Flash bank)
• Flash Bank: Two Small Erase Element Sizes
– 1 KWords per Sector or 32 KWords per Block
– Erase either element before Word-Program
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
– 48-Pin TSOP (12mm x 20mm)
• Continuous Hardware and Software Data Protection (SDP)
• A One Time Programmable (OTP) E2 Sector