Sanhuang electronics (Hong Kong) Co., Limited
                                                                                                           
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IS61DDB251236A-250M3L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc

Price Negotiable
Price: Based on current price
MOQ: 1
Delivery Time: 3-5 work days
Brand: ISSI, Integrated Silicon Solution Inc
Product Description

Product Details

 

DESCRIPTION

The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series IS61DDB251236A
Packaging Tray
Mounting-Style SMD/SMT
Package-Case 165-LBGA
Operating-Temperature 0°C ~ 70°C (TA)
Interface Common I/O
Voltage-Supply 1.71 V ~ 1.89 V
Supplier-Device-Package 165-LFBGA (15x17)
Memory Capacity 18M (512K x 36)
Memory-Type SRAM - Synchronous, DDR II
Speed 250MHz
Format-Memory RAM
Maximum Operating Temperature + 70 C
Operating temperature range 0 C
Interface-Type Parallel
Organization 512 k x 36
Supply-Current-Max 650 mA
Supply-Voltage-Max 1.9 V
Supply-Voltage-Min 1.7 V
Package-Case FBGA-165
Maximum-Clock-Frequency 250 MHz

Descriptions

SRAM - Synchronous, DDR II Memory IC 18Mb (512K x 36) Parallel 250MHz 165-LFBGA (15x17)
SRAM Chip Sync Dual 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA
SRAM 18Mb 512Kx36 DDR-II Sync SRAM

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Company Sanhuang electronics (Hong Kong) Co., Limited
Location No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person Zhao

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