AS4C16M16D1-5BCN IC DRAM 256MBIT PAR 60TFBGA Alliance Memory, Inc.
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Alliance Memory, Inc.
Product Description
Product Details
Features
• Organization: 1,048,576 words × 4 bits• High speed
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
• Low power consumption
- Active: 385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode (AS4C14400) or EDO (AS4C14405)
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
• Single 5V power supply
• ESD protection ≥ 2001V
• Latch-up current ≥ 200 mA
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Product Category | Memory ICs |
| Series | AS4C16M16D1 |
| Type | DDR1 |
| Packaging | Tray Alternate Packaging |
| Mounting-Style | SMD/SMT |
| Package-Case | 60-TFBGA |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 2.3 V ~ 2.7 V |
| Supplier-Device-Package | 60-TFBGA (13x8) |
| Memory Capacity | 256M (16M x 16) |
| Memory-Type | DDR SDRAM |
| Speed | 200MHz |
| Access-Time | 0.7 ns |
| Format-Memory | RAM |
| Maximum Operating Temperature | + 70 C |
| Operating temperature range | 0 C |
| Organization | 16 M x 16 |
| Supply-Current-Max | 135 mA |
| Data-Bus-Width | 16 bit |
| Supply-Voltage-Max | 2.7 V |
| Supply-Voltage-Min | 2.3 V |
| Package-Case | TFBGA-60 |
| Maximum-Clock-Frequency | 200 MHz |
Descriptions
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 60-TFBGA (8x13)
DRAM 256M 2.5V 200Mhz 16M x 16 DDR1
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Get in Touch
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao