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71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

Price Negotiable
Price: Based on current price
MOQ: 1
Delivery Time: 3-5 work days
Brand: Renesas Electronics America Inc
Product Description

Product Details

 

Description

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

 

 

Features

◆ 256K x 16 advanced high-speed CMOS Static RAM
◆ JEDEC Center Power / GND pinout for reduced noise.
◆ Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
◆ One Chip Select plus one Output Enable pin
◆ Bidirectional data inputs and outputs directly LVTTL-compatible
◆ Low power consumption via chip deselect
◆ Upper and Lower Byte Enable Pins
◆ Single 3.3V power supply
◆ Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

 

 

Specifications

Attribute Attribute Value
Manufacturer Integrated Circuit Systems
Product Category Memory ICs
Series 71V416
Type Asynchronous
Packaging Tray Alternate Packaging
Mounting-Style SMD/SMT
Package-Case 48-TFBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 3 V ~ 3.6 V
Supplier-Device-Package 48-CABGA (9x9)
Memory Capacity 4M (256K x 16)
Memory-Type SRAM - Asynchronous
Speed 12ns
Access-Time 12 ns
Format-Memory RAM
Maximum Operating Temperature + 85 C
Operating temperature range - 40 C
Interface-Type Parallel
Organization 256 k x 16
Supply-Current-Max 180 mA
Part-#-Aliases 71V416 IDT71V416S12BEI
Supply-Voltage-Max 3.6 V
Supply-Voltage-Min 3 V
Package-Case CABGA-48
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
IDT71V416S12BEI8
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs IDT71V416S12BEI8
IDT71V416YS12BEG3
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs IDT71V416YS12BEG3
IDT71V416S12BEI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs IDT71V416S12BEI
IDT71V416VS12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs IDT71V416VS12BEGI
IDT71V416YS12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs IDT71V416YS12BEGI
IDT71V416YFS12BEI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, POWER, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs IDT71V416YFS12BEI
71V416VS12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs 71V416VS12BEGI
71V416S12BEI8
Memory
CABGA-48, Reel Integrated Device Technology Inc 71V416S12BEI vs 71V416S12BEI8
IDT71V416S12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs IDT71V416S12BEGI
71V416S12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48 Integrated Device Technology Inc 71V416S12BEI vs 71V416S12BEGI

Descriptions

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM

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Company Sanhuang electronics (Hong Kong) Co., Limited
Location No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person Zhao

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