71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Renesas Electronics America Inc
Product Description
Product Details
Description
The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high speed memory needs.
Features
◆512K x 8 advanced high-speed CMOS Static RAM◆JEDEC Center Power / GND pinout for reduced noise
◆Equal access and cycle times
— Commercial and Industrial: 10/12/15ns
◆Single 3.3V power supply
◆One Chip Select plus one Output Enable pin
◆Bidirectional data inputs and outputs directly TTL-compatible
◆Low power consumption via chip deselect
◆Available in 36-pin, 400 mil plastic SOJ package and 44-pin, 400 mil TSOP.
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Integrated Circuit Systems |
| Product Category | Memory ICs |
| Series | 71V424 |
| Type | Asynchronous |
| Packaging | Alternate Packaging |
| Mounting-Style | SMD/SMT |
| Package-Case | 36-BSOJ (0.400", 10.16mm Width) |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3 V ~ 3.6 V |
| Supplier-Device-Package | 36-SOJ |
| Memory Capacity | 4M (512K x 8) |
| Memory-Type | SRAM - Asynchronous |
| Speed | 10ns |
| Access-Time | 10 ns |
| Format-Memory | RAM |
| Maximum Operating Temperature | + 70 C |
| Operating temperature range | 0 C |
| Interface-Type | Parallel |
| Organization | 512 k x 8 |
| Supply-Current-Max | 180 mA |
| Part-#-Aliases | 71V424 IDT71V424S10YG8 |
| Supply-Voltage-Max | 3.6 V |
| Supply-Voltage-Min | 3 V |
| Package-Case | SOJ-36 |
| Manufacturer Part# | Description | Manufacturer | Compare |
| K6R4008V1B-JC10 Memory |
Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36 | Samsung Semiconductor | 71V424S10YG8 vs K6R4008V1B-JC10 |
| 71V424L10YGI8 Memory |
SOJ-36, Reel | Integrated Device Technology Inc | 71V424S10YG8 vs 71V424L10YGI8 |
| AS7C34096A-10JCN Memory |
Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, SOJ-36 | Alliance Memory Inc | 71V424S10YG8 vs AS7C34096A-10JCN |
| 71V424S10YGI8 Memory |
SOJ-36, Reel | Integrated Device Technology Inc | 71V424S10YG8 vs 71V424S10YGI8 |
| IS61LV5128AL-10KLI Memory |
Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-36 | Integrated Silicon Solution Inc | 71V424S10YG8 vs IS61LV5128AL-10KLI |
| AS7C34096A-10JIN Memory |
Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, SOJ-36 | Alliance Memory Inc | 71V424S10YG8 vs AS7C34096A-10JIN |
| AS7C34096A-10JI Memory |
Standard SRAM, 512KX8, 10ns, CMOS, PDSO36 | Alliance Memory Inc | 71V424S10YG8 vs AS7C34096A-10JI |
Descriptions
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao