70V657S10DRG IC SRAM 1.125MBIT PAR 208PQFP Renesas Electronics America Inc
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Renesas Electronics America Inc
Product Description
Product Details
Description
The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.
Features
◆ True Dual-Port memory cells which allow simultaneous access of the same memory location◆ High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
◆ Dual chip enables allow for depth expansion without external logic
◆ IDT70V659/58/57 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device
◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave
◆ Busy and Interrupt Flags
◆ On-chip port arbitration logic
◆ Full on-chip hardware support of semaphore signaling between ports
◆ Fully asynchronous operation from either port
◆ Separate byte controls for multiplexed bus and bus matching compatibility
◆ Supports JTAG features compliant to IEEE 1149.1
◆ LVTTL-compatible, single 3.3V (±150mV) power supply for core
◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port
◆ Available in a 208-pin Plastic Quad Flatpack, 208-ball fine pitch Ball Grid Array, and 256-ball Ball Grid Array
◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Integrated Circuit Systems |
| Product Category | Memory ICs |
| Series | 70V657 |
| Type | Asynchronous |
| Packaging | Tray |
| Mounting-Style | SMD/SMT |
| Package-Case | 208-BFQFP |
| Operating-Temperature | 0°C ~ 70°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3.15 V ~ 3.45 V |
| Supplier-Device-Package | 208-PQFP (28x28) |
| Memory Capacity | 1.125M (32K x 36) |
| Memory-Type | SRAM - Dual Port, Asynchronous |
| Speed | 10ns |
| Access-Time | 10 ns |
| Format-Memory | RAM |
| Maximum Operating Temperature | + 70 C |
| Operating temperature range | 0 C |
| Interface-Type | Parallel |
| Organization | 32 k x 36 |
| Supply-Current-Max | 500 mA |
| Part-#-Aliases | 70V657 IDT70V657S10DRG |
| Supply-Voltage-Max | 3.45 V |
| Supply-Voltage-Min | 3.15 V |
| Package-Case | PQFP-208 |
| Manufacturer Part# | Description | Manufacturer | Compare |
| IDT70V657S10BFG Memory |
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208 | Integrated Device Technology Inc | 70V657S10DRG vs IDT70V657S10BFG |
| 70V657S10BFG Memory |
CABGA-208, Tray | Integrated Device Technology Inc | 70V657S10DRG vs 70V657S10BFG |
| 70V657S10BFG8 Memory |
CABGA-208, Reel | Integrated Device Technology Inc | 70V657S10DRG vs 70V657S10BFG8 |
| IDT70V657S10BFG8 Memory |
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 | Integrated Device Technology Inc | 70V657S10DRG vs IDT70V657S10BFG8 |
| 70V657S10BC Memory |
CABGA-256, Tray | Integrated Device Technology Inc | 70V657S10DRG vs 70V657S10BC |
| IDT70V657S10DRG Memory |
Dual-Port SRAM, 32KX36, 10ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208 | Integrated Device Technology Inc | 70V657S10DRG vs IDT70V657S10DRG |
| IDT70V657S10BCG Memory |
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 | Integrated Device Technology Inc | 70V657S10DRG vs IDT70V657S10BCG |
| 70V657S10BCG Memory |
CABGA-256, Tray | Integrated Device Technology Inc | 70V657S10DRG vs 70V657S10BCG |
| IDT70V657S10BC Memory |
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | Integrated Device Technology Inc | 70V657S10DRG vs IDT70V657S10BC |
| 70V657S10BCG8 Memory |
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | Integrated Device Technology Inc | 70V657S10DRG vs 70V657S10BCG8 |
Descriptions
SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 10ns 208-PQFP (28x28)
SRAM 32K X 36 ASYNC DP RAM
Get in Touch
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao