Sanhuang electronics (Hong Kong) Co., Limited
                                                                                                           
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70V657S10DRG IC SRAM 1.125MBIT PAR 208PQFP Renesas Electronics America Inc

Price Negotiable
Price: Based on current price
MOQ: 1
Delivery Time: 3-5 work days
Brand: Renesas Electronics America Inc
Product Description

Product Details

 

Description

The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

 

 

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location
◆ High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
◆ Dual chip enables allow for depth expansion without external logic
◆ IDT70V659/58/57 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device
◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave
◆ Busy and Interrupt Flags
◆ On-chip port arbitration logic
◆ Full on-chip hardware support of semaphore signaling between ports
◆ Fully asynchronous operation from either port
◆ Separate byte controls for multiplexed bus and bus matching compatibility
◆ Supports JTAG features compliant to IEEE 1149.1
◆ LVTTL-compatible, single 3.3V (±150mV) power supply for core
◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port
◆ Available in a 208-pin Plastic Quad Flatpack, 208-ball fine pitch Ball Grid Array, and 256-ball Ball Grid Array
◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

 

Specifications

Attribute Attribute Value
Manufacturer Integrated Circuit Systems
Product Category Memory ICs
Series 70V657
Type Asynchronous
Packaging Tray
Mounting-Style SMD/SMT
Package-Case 208-BFQFP
Operating-Temperature 0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply 3.15 V ~ 3.45 V
Supplier-Device-Package 208-PQFP (28x28)
Memory Capacity 1.125M (32K x 36)
Memory-Type SRAM - Dual Port, Asynchronous
Speed 10ns
Access-Time 10 ns
Format-Memory RAM
Maximum Operating Temperature + 70 C
Operating temperature range 0 C
Interface-Type Parallel
Organization 32 k x 36
Supply-Current-Max 500 mA
Part-#-Aliases 70V657 IDT70V657S10DRG
Supply-Voltage-Max 3.45 V
Supply-Voltage-Min 3.15 V
Package-Case PQFP-208
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
IDT70V657S10BFG
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208 Integrated Device Technology Inc 70V657S10DRG vs IDT70V657S10BFG
70V657S10BFG
Memory
CABGA-208, Tray Integrated Device Technology Inc 70V657S10DRG vs 70V657S10BFG
70V657S10BFG8
Memory
CABGA-208, Reel Integrated Device Technology Inc 70V657S10DRG vs 70V657S10BFG8
IDT70V657S10BFG8
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 Integrated Device Technology Inc 70V657S10DRG vs IDT70V657S10BFG8
70V657S10BC
Memory
CABGA-256, Tray Integrated Device Technology Inc 70V657S10DRG vs 70V657S10BC
IDT70V657S10DRG
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208 Integrated Device Technology Inc 70V657S10DRG vs IDT70V657S10DRG
IDT70V657S10BCG
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 Integrated Device Technology Inc 70V657S10DRG vs IDT70V657S10BCG
70V657S10BCG
Memory
CABGA-256, Tray Integrated Device Technology Inc 70V657S10DRG vs 70V657S10BCG
IDT70V657S10BC
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 Integrated Device Technology Inc 70V657S10DRG vs IDT70V657S10BC
70V657S10BCG8
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 Integrated Device Technology Inc 70V657S10DRG vs 70V657S10BCG8

Descriptions

SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 10ns 208-PQFP (28x28)
SRAM 32K X 36 ASYNC DP RAM

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Company Sanhuang electronics (Hong Kong) Co., Limited
Location No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person Zhao

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