IS61NLP25618A-200B3LI-TR IC SRAM 4.5MBIT PARALLEL 165PBGA ISSI, Integrated Silicon Solution Inc
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
ISSI, Integrated Silicon Solution Inc
Product Description
Product Details
DESCRIPTION
The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K words by 18 bits, fabricated with ISSIs advanced CMOS technology.
FEATURES
• 100 percent bus utilization• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply:
NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%)
NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)
• Industrial temperature available
• Lead-free available
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ISSI |
| Product Category | Memory ICs |
| Series | IS61NLP25618A |
| Type | Synchronous |
| Packaging | Tape & Reel (TR) Alternate Packaging |
| Mounting-Style | SMD/SMT |
| Package-Case | 165-TFBGA |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 3.135 V ~ 3.465 V |
| Supplier-Device-Package | 165-BGA (13x15) |
| Memory Capacity | 4.5M (256K x 18) |
| Memory-Type | SRAM - Synchronous |
| Speed | 200MHz |
| Data-Rate | SDR |
| Access-Time | 3.1 ns |
| Format-Memory | RAM |
| Maximum Operating Temperature | + 85 C |
| Operating temperature range | - 40 C |
| Interface-Type | Parallel |
| Organization | 256 k x 18 |
| Supply-Current-Max | 210 mA |
| Supply-Voltage-Max | 3.465 V |
| Supply-Voltage-Min | 3.135 V |
| Package-Case | BGA-165 |
| Maximum-Clock-Frequency | 200 MHz |
Descriptions
SRAM - Synchronous Memory IC 4.5Mb (256K x 18) Parallel 200MHz 3.1ns 165-BGA (13x15)
SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 3.1ns 165-Pin BGA T/R
SRAM 4M (256Kx18) 200MHz Sync SRAM 3.3v
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao