Sanhuang electronics (Hong Kong) Co., Limited
                                                                                                           
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IS61NLP25618A-200B3LI-TR IC SRAM 4.5MBIT PARALLEL 165PBGA ISSI, Integrated Silicon Solution Inc

Price Negotiable
Price: Based on current price
MOQ: 1
Delivery Time: 3-5 work days
Brand: ISSI, Integrated Silicon Solution Inc
Product Description

Product Details

 

DESCRIPTION

The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

 

 

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply:
NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%)
NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)
• Industrial temperature available
• Lead-free available

 

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series IS61NLP25618A
Type Synchronous
Packaging Tape & Reel (TR) Alternate Packaging
Mounting-Style SMD/SMT
Package-Case 165-TFBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 3.135 V ~ 3.465 V
Supplier-Device-Package 165-BGA (13x15)
Memory Capacity 4.5M (256K x 18)
Memory-Type SRAM - Synchronous
Speed 200MHz
Data-Rate SDR
Access-Time 3.1 ns
Format-Memory RAM
Maximum Operating Temperature + 85 C
Operating temperature range - 40 C
Interface-Type Parallel
Organization 256 k x 18
Supply-Current-Max 210 mA
Supply-Voltage-Max 3.465 V
Supply-Voltage-Min 3.135 V
Package-Case BGA-165
Maximum-Clock-Frequency 200 MHz

Descriptions

SRAM - Synchronous Memory IC 4.5Mb (256K x 18) Parallel 200MHz 3.1ns 165-BGA (13x15)
SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 3.1ns 165-Pin BGA T/R
SRAM 4M (256Kx18) 200MHz Sync SRAM 3.3v

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Sanhuang electronics (Hong Kong) Co., Limited
Location No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person Zhao

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