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S29CD016J0MQFM030 IC FLASH 16MBIT PAR 56MHZ 80PQFP Infineon Technologies

Price Negotiable
Price: Based on current price
MOQ: 1
Delivery Time: 3-5 work days
Brand: Infineon Technologies
Product Description

Product Details

 

General Description

The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.

 

 

Distinctive Characteristics

Architecture Advantages
■ Simultaneous Read/Write operations
— Read data from one bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: large bank/small bank
75%/25%
■ User-Defined x32 Data Bus
■ Dual Boot Block
— Top and bottom boot sectors in the same device
■ Flexible sector architecture
— CD032G: Eight 2K Double Word, Sixty-two 16K
Double Word, and Eight 2K Double Word sectors
— CD016G: Eight 2K Double Word, Thirty-two 16K
Double Word, and Eight 2K Double Word sectors
■ Secured Silicon Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; Also know
as Electronic Marking
■ Manufactured on 170 nm Process Technology
■ Programmable Burst interface
— Interfaces to any high performance processor
— Linear Burst Read Operation: 2, 4, and 8 double
word linear burst with or without wrap around
■ Program Operation
— Performs synchronous and asynchronous write
operations of burst configuration register settings
independently
■ Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
■ Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD/Fujitsu Am29LV/
MBM29LV and Am29F/MBM29F flash memories

 

 

Performance Characteristics

■ High performance read access
— Initial/random access times of 48 ns (32 Mb) and 54
ns (16 Mb)
— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
■ Ultra low power consumption
— Burst Mode Read: 90 mA @ 75 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
■ 1 million write cycles per sector typical
■ 20 year data retention typical
■ VersatileI/O™ control
— Generates data output voltages and tolerates data
input voltages as determined by the voltage on the
VIO pin
— 1.65 V to 3.60 V compatible I/O signals

 

 

Software Features

■ Persistent Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector (requires only VCC levels)
■ Password Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector using a user-definable 64-bit
password
■ Supports Common Flash Interface (CFI)
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion

 

 

Hardware Features

■ Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
■ Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
■ ACC input
— Accelerates programming time for higher throughput
during system production
■ Package options
— 80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option also available
— Known Good Die

 

Specifications

Attribute Attribute Value
Manufacturer Cypress Semiconductor
Product Category Memory ICs
Series CD-J
Type Boot Block
Packaging Tray
Mounting-Style SMD/SMT
Operating-Temperature-Range - 40 C to + 125 C
Package-Case 80-BQFP
Operating-Temperature -40°C ~ 125°C (TA)
Interface Parallel
Voltage-Supply 1.65 V ~ 2.75 V
Supplier-Device-Package 80-PQFP (20x20)
Memory Capacity 16M (512K x 32)
Memory-Type FLASH - NOR
Speed 56MHz
Architecture Sector
Format-Memory FLASH
Standard Common Flash Interface (CFI)
Interface-Type Parallel
Organization 512 k x 32
Supply-Current-Max 90 mA
Data-Bus-Width 32 bit
Supply-Voltage-Max 2.75 V
Supply-Voltage-Min 2.5 V
Package-Case PQFP-80
Maximum-Clock-Frequency 56 MHz
Timing-Type Asynchronous Synchronous
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
S29CD016J0JQFI030
Memory
Flash, 512KX32, 54ns, PQFP80, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0JQFI030
S29CD016J0JQFI110
Memory
Flash, 512KX32, 54ns, PQFP80, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0JQFI110
S29CD016J0MQFI012
Memory
Flash, 512KX32, 54ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0MQFI012
S29CD016J0MQFM010
Memory
Flash, 512KX32, 54ns, PQFP80, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0MQFM010
S29CD016J0MQFM110
Memory
Flash, 512KX32, 54ns, PQFP80, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0MQFM110
S29CD016J0JQFI112
Memory
Flash, 512KX32, 54ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0JQFI112
S29CD016J0JQFI032
Memory
Flash, 512KX32, 54ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0JQFI032
S29CD016J0MQFI013
Memory
Flash, 512KX32, 54ns, PQFP80, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0MQFI013
S29CD016J0PQFM110
Memory
Flash, 512KX32, 54ns, PQFP80, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0PQFM110
S29CD016J0MQAM130
Memory
Flash, 512KX32, 54ns, PQFP80, QFP-80 Cypress Semiconductor S29CD016J0MQFM030 vs S29CD016J0MQAM130

Descriptions

FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 56MHz 54ns 80-PQFP (20x20)
NOR Flash Parallel/Serial 2.6V 16M-bit 512K x 32 54ns Automotive 80-Pin PQFP Tray
Flash Memory

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Company Sanhuang electronics (Hong Kong) Co., Limited
Location No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person Zhao

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