CYDM256B16-55BVXI IC SRAM 256KBIT PAR 100VFBGA Infineon Technologies
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Infineon Technologies
Product Description
Product Details
Axial Leaded Precision Resistors
The Holco range of Precision Metal Film Resistors meets the requirement for economically priced components for industrial and military applications. The manufacturing facility utilises closely controlled production processes including the sputter coating of metal alloy films to ceramic substrates, and laser spiralling to achieve close tolerance and high stability resistors. An epoxy coating is applied for environmental and mechanical protection. Commercially the Series is available in two case sizes, from 1 ohm to 4M ohms, tolerances from 0.05% to 1% and TCRs from 5ppm/°C to 100ppm/°C. Offered with release to BS CECC 40101 004, 030 and 804 the H8 is available via distribution.
Key Features
■ Ultra Precision - Down To 0.05%■ Matched Sets Available To 2ppm/°C
■ High Pulse Withstand
■ Low Reactance
■ Low TCR - Down To 5ppm/°C
■ Long Term Stability
■ Up To 1 Watt At 70°C
■ Released To CECC 40101 004, 030 And 804
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Cypress Semiconductor |
| Product Category | Memory ICs |
| Series | CYDM256B16 |
| Type | Asynchronous |
| Packaging | Tray Alternate Packaging |
| Mounting-Style | SMD/SMT |
| Tradename | MoBL |
| Package-Case | 100-VFBGA |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 2.7 V ~ 3.3 V |
| Supplier-Device-Package | 100-VFBGA (6x6) |
| Memory Capacity | 256K (16K x 16) |
| Memory-Type | SRAM - Dual Port, MoBL |
| Speed | 55ns |
| Data-Rate | SDR |
| Access-Time | 55 ns |
| Format-Memory | RAM |
| Maximum Operating Temperature | + 85 C |
| Operating temperature range | - 40 C |
| Interface-Type | Parallel |
| Organization | 16 k x 16 |
| Supply-Current-Max | 25 mA |
| Supply-Voltage-Max | 1.9 V |
| Supply-Voltage-Min | 1.7 V |
| Package-Case | BGA-100 |
Functional compatible component
Form,Package,Functional compatible component
| Manufacturer Part# | Description | Manufacturer | Compare |
| IDT70P9268L50BZG Memory |
Dual-Port SRAM, 16KX16, 10ns, PBGA100, GREEN, FPBGA-100 | Integrated Device Technology Inc | CYDM256B16-55BVXI vs IDT70P9268L50BZG |
| CYDMX256B16-65BVXI Memory |
Dual-Port SRAM, 16KX16, 65ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100 | Cypress Semiconductor | CYDM256B16-55BVXI vs CYDMX256B16-65BVXI |
| CYDMX256A16-65BVXI Memory |
Dual-Port SRAM, 16KX16, 65ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100 | Cypress Semiconductor | CYDM256B16-55BVXI vs CYDMX256A16-65BVXI |
| CYDM256B16-55BVXIT Memory |
Multi-Port SRAM, 16KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100 | Cypress Semiconductor | CYDM256B16-55BVXI vs CYDM256B16-55BVXIT |
| IDT70P926850BZGI Memory |
Dual-Port SRAM, 16KX16, 12ns, CMOS, PBGA100, GREEN, FPBGA-100 | Integrated Device Technology Inc | CYDM256B16-55BVXI vs IDT70P926850BZGI |
| IDT70P926850BZG Memory |
Dual-Port SRAM, 16KX16, 12ns, CMOS, PBGA100, GREEN, FPBGA-100 | Integrated Device Technology Inc | CYDM256B16-55BVXI vs IDT70P926850BZG |
| CYDM256B16-55BVXC Memory |
16KX16 DUAL-PORT SRAM, 55ns, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100 | Rochester Electronics LLC | CYDM256B16-55BVXI vs CYDM256B16-55BVXC |
| 70P265L90BYGI Memory |
Dual-Port SRAM, 16KX16, 90ns, CMOS, PBGA100, 0.5 MM PITCH, GREEN, BGA-100 | Integrated Device Technology Inc | CYDM256B16-55BVXI vs 70P265L90BYGI |
| IDT70P9268L50BZGI Memory |
Dual-Port SRAM, 16KX16, 10ns, PBGA100, GREEN, FPBGA-100 | Integrated Device Technology Inc | CYDM256B16-55BVXI vs IDT70P9268L50BZGI |
| 70P265L90BYGI8 Memory |
Dual-Port SRAM, 16KX16, 90ns, CMOS, PBGA100, 0.50 MM PITCH, GREEN, BGA-100 | Integrated Device Technology Inc | CYDM256B16-55BVXI vs 70P265L90BYGI8 |
Descriptions
SRAM - Dual Port, MoBL Memory IC 256Kb (16K x 16) Parallel 55ns 100-VFBGA (6x6)
SRAM Chip Async Dual 1.8V 256K-Bit 16K x 16 55ns 100-Pin VFBGA Tray
SRAM 256K 16Kx16 MoBL Dual Port IND
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao