Sanhuang electronics (Hong Kong) Co., Limited
                                                                                                           
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AS4C128M32MD2A-18BIN IC DRAM 4GBIT PARALLEL 134FBGA Alliance Memory, Inc.

Price Negotiable
Price: Based on current price
MOQ: 1
Delivery Time: 3-5 work days
Brand: Alliance Memory, Inc.
Product Description

Product Details

 

Features

• Organization: 1,048,576 words × 4 bits
• High speed
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
• Low power consumption
- Active: 385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode (AS4C14400) or EDO (AS4C14405)
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
• Single 5V power supply
• ESD protection ≥ 2001V
• Latch-up current ≥ 200 mA

 

Specifications

AttributeAttribute Value
ManufacturerAlliance Memory, Inc.
Product CategoryIC Chips
MfrAlliance Memory Inc.
Series-
PackageTray
Product-StatusActive
Memory-Type Volatile
Memory-FormatDRAM
Technology SDRAM - Mobile LPDDR2
Memory-Size4Gb (128M x 32)
Memory-Interface Parallel
Clock-Frequency 533 MHz
Write-Cycle-Time-Word-Page15ns
Voltage-Supply 1.14V ~ 1.95V
Operating-Temperature -40°C ~ 85°C (TC)
Mounting-TypeSurface Mount
Package-Case134-VFBGA
Supplier-Device-Package134-FBGA (10x11.5)
Base-Product-NumberAS4C128

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Sanhuang electronics (Hong Kong) Co., Limited
Location No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person Zhao

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