S29CD016J0MFAM010 IC FLASH 16MBIT PAR 56MHZ 80FBGA Infineon Technologies
Price:
Based on current price
MOQ:
1
Delivery Time:
3-5 work days
Brand:
Infineon Technologies
Product Description
Product Details
General Description
The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.
Distinctive Characteristics
Architecture Advantages■ Simultaneous Read/Write operations
— Read data from one bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: large bank/small bank
75%/25%
■ User-Defined x32 Data Bus
■ Dual Boot Block
— Top and bottom boot sectors in the same device
■ Flexible sector architecture
— CD032G: Eight 2K Double Word, Sixty-two 16K
Double Word, and Eight 2K Double Word sectors
— CD016G: Eight 2K Double Word, Thirty-two 16K
Double Word, and Eight 2K Double Word sectors
■ Secured Silicon Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; Also know
as Electronic Marking
■ Manufactured on 170 nm Process Technology
■ Programmable Burst interface
— Interfaces to any high performance processor
— Linear Burst Read Operation: 2, 4, and 8 double
word linear burst with or without wrap around
■ Program Operation
— Performs synchronous and asynchronous write
operations of burst configuration register settings
independently
■ Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
■ Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD/Fujitsu Am29LV/
MBM29LV and Am29F/MBM29F flash memories
Performance Characteristics
■ High performance read access— Initial/random access times of 48 ns (32 Mb) and 54
ns (16 Mb)
— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
■ Ultra low power consumption
— Burst Mode Read: 90 mA @ 75 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
■ 1 million write cycles per sector typical
■ 20 year data retention typical
■ VersatileI/O™ control
— Generates data output voltages and tolerates data
input voltages as determined by the voltage on the
VIO pin
— 1.65 V to 3.60 V compatible I/O signals
Software Features
■ Persistent Sector Protection— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector (requires only VCC levels)
■ Password Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector using a user-definable 64-bit
password
■ Supports Common Flash Interface (CFI)
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
■ Program Suspend/Resume & Erase Suspend/Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
■ Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
■ ACC input
— Accelerates programming time for higher throughput
during system production
■ Package options
— 80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option also available
— Known Good Die
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Cypress Semiconductor |
| Product Category | Memory ICs |
| Series | CD-J |
| Type | Boot Block |
| Packaging | Tray |
| Mounting-Style | SMD/SMT |
| Operating-Temperature-Range | - 40 C to + 125 C |
| Package-Case | 80-LBGA |
| Operating-Temperature | -40°C ~ 125°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 1.65 V ~ 2.75 V |
| Supplier-Device-Package | 80-Fortified BGA (13x11) |
| Memory Capacity | 16M (512K x 32) |
| Memory-Type | FLASH - NOR |
| Speed | 56MHz |
| Architecture | Sector |
| Format-Memory | FLASH |
| Standard | Common Flash Interface (CFI) |
| Interface-Type | Parallel |
| Organization | 512 k x 32 |
| Supply-Current-Max | 90 mA |
| Data-Bus-Width | 32 bit |
| Supply-Voltage-Max | 2.75 V |
| Supply-Voltage-Min | 2.5 V |
| Package-Case | FBGA-80 |
| Maximum-Clock-Frequency | 56 MHz |
| Timing-Type | Asynchronous Synchronous |
| Manufacturer Part# | Description | Manufacturer | Compare |
| S29CD016J1JFFM112 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM112 |
| S29CD016J0JFFI013 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0JFFI013 |
| S29CD016J1JFFM113 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM113 |
| S29CD016J1JFFM032 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM032 |
| S29CD016J0MFFM133 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM133 |
| S29CD016J1JFFM030 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J1JFFM030 |
| S29CD016J0JFFI010 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0JFFI010 |
| S29CD016J0MFFM130 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM130 |
| S29CD016J0MFFI033 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFI033 |
| S29CD016J0MFFM132 Memory |
Flash, 512KX32, 54ns, PBGA80, BGA-80 | Cypress Semiconductor | S29CD016J0MFAM010 vs S29CD016J0MFFM132 |
Descriptions
FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 56MHz 54ns 80-FBGA (13x11)
NOR Flash Parallel 2.6V 16M-bit 512K x 32 54ns Automotive 80-Pin Fortified BGA Tray
Flash Memory
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao