STAV58010P2 GaN RF Power Transistor 50V 10W DC-6GHz for 5G Infrastructure and Test Instruments
Price:
Based on current price
MOQ:
1
Delivery Time:
5-8 work days
Brand:
in
Product Description
Product Overview
The STAV58010P2 is a 10W gallium nitride (GaN) RF power transistor operating at 50V with a frequency range from DC to 6GHz. This unmatched GaN HEMT delivers high gain, wide bandwidth, and cost-effective performance in a compact 4×4.5mm DFN plastic package.
Key Specifications
Power Output: 10W
Operating Voltage: 50V DC
Frequency Range: DC - 6GHz
Package: 4×4.5mm DFN Plastic
Technology: Gallium Nitride (GaN) HEMT
Performance Characteristics
Class AB Single-Carrier W-CDMA Performance (VDD = 50Vdc, IDQ = 20mA)
| Frequency (MHz) | Pout (dBm) | CCDF (dB) | Ppeak (dBm) | Ppeak (W) | ACRP (dBc) | Gain (dB) | Efficiency (%) |
|---|---|---|---|---|---|---|---|
| 3300 | 33.00 | 9.12 | 42.12 | 16.3 | -35.9 | 16.8 | 27.8 |
| 3400 | 32.99 | 9.04 | 42.03 | 16.0 | -36.3 | 17.1 | 27.8 |
| 3500 | 33.00 | 8.92 | 41.92 | 15.6 | -37.1 | 17.4 | 28.7 |
| 3600 | 32.97 | 8.90 | 41.88 | 15.4 | -38.1 | 17.5 | 27.4 |
| 3700 | 33.00 | 8.97 | 41.97 | 15.7 | -39.4 | 17.4 | 27.4 |
| 3800 | 33.01 | 8.90 | 41.91 | 15.5 | -40.7 | 16.6 | 25.7 |
Note: Performance data measured on integration application board with device soldered. No guarantee of performance outside stated frequencies.
Signal Compatibility
Supports continuous wave (CW), pulse, and any modulated signal types for maximum application flexibility.
Applications
- 5G and 4G wireless infrastructure
- Wideband and narrowband power amplifiers
- Test and measurement instruments
- Civil pulse radar systems
- Jammer systems
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Get in Touch
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Company
Sanhuang electronics (Hong Kong) Co., Limited
Location
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Contact Person
Zhao