High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
High Purity 99.97% Tungsten Target For Sputtering Coating
Introduction
1. Tungsten sputtering target adopts best-demonstrated techniques including X-ray fluorescence (XRF), glow discharge mass spectrometry (GDMS), and inductively coupled plasma (ICP);
2. Tungsten target from Achemetal is provided with high purity up to 99.97%, density 18.8-19g/cm3, homogeneous organization structure, and fine grain;
3. Our tungsten sputtering target has been approved by the ASTM B 760-2007 and GB 3875-2006.
PARAMETER
|
OD(mm) |
ID(mm) |
Length(mm) |
Custom Made |
|
140-300 |
120-280 |
100-3300 |
|
Model Number |
W1 |
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|
Shape |
customized |
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|
Chemical Composition |
99.95% W |
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Feature
1. High density
2. High wear-resistant
3. High thermal conductivity with low thermal expansion coefficient
Specification
|
Atomic number |
74 |
|
CAS number |
7440-33-7 |
|
Atomic mass |
183.84 [g/mol] |
|
Melting point |
3420 °C |
|
Boiling point |
5555 °C |
|
Density at 20 °C |
19.25 [g/cm3] |
|
Crystal structure |
Body-centered cubic |
|
Coefficient of linear thermal expansion at 20 °C |
4.410-6[m/(mK)] |
|
Thermal conductivity at 20 °C |
164 [W/(mK)] |
|
Specific heat at 20 °C |
0.13 [J/(gK)] |
|
Electrical conductivity at 20 °C |
18.2106[S/m] |
|
Specific electrical resistance at 20 °C |
0.055 [(mm2)/m] |
APPLICATIONS
semiconductor
chemical vapor deposition (CVD)
physical vapor deposition (PVD) display
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