China 20V Repetitive Peak Reverse Voltage SS12A Schottky Barrier Diode SMA Package for sale

20V Repetitive Peak Reverse Voltage SS12A Schottky Barrier Diode SMA Package

Price Negotiable

Price: Negotiable

MOQ: 5000PCS

Delivery Time: 5-8 work days

Brand: SOCAY

Product Description

20V Repetitive Peak Reverse Voltage SS12A Schottky Barrier Diode SMA Package

Schottky Barrier Diode DATASHEET: SS12A~SS120A(SMA)_v2211.1.pdf

Schottky Barrier Diode Features:

Low profile package
Ideal for automated placement
Ultrafast reverse recovery time
Low power losses, high efficiency
Low forward voltage drop
High surge capability
High temperature soldering:
260℃/10 seconds at terminals

Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC

Schottky Barrier Diode Mechanical Data:

Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end

Schottky Barrier Diode Major Ratings and Characteristics:

I_F(AV)	1.0A
V_RRM	20 V to 200 V
I_FSM	40A
V_F	0.50V, 0.55V, 0.70V, 0.85V,0.95V
T_{j max.}	125℃

Schottky Barrier Diode Maximum Ratings & Thermal Characteristics (T_A = 25℃ unless otherwise noted):

Items	Symbol	SS12A	SS13A	SS14A	SS15A	SS16A	SS18A	SS110A	SS115A	SS120A	Unit
Maximum repetitive peak reverse voltage	V_RRM	20	30	40	50	60	80	100	150	200	V
Maximum RMS voltage	V_RMS	14	21	28	35	42	56	70	105	140	V
Maximum DC blocking voltage	V_DC	20	30	40	50	60	80	100	150	200	V
Maximum average forward rectified current	I_F_(AV)	1									A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load	I_FSM	40									A
Voltage rate of change (rated V_R)	dv/dt	10000									V/μs
Thermal resistance from junction to lead ⁽¹⁾	R_θJL	35									℃/W
Operating junction and storage temperature range	T_J,T_STG	–65 to +125									℃
Note 1: Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas.

Schottky Barrier Diode Electrical Characteristics (T_A = 25℃ unless otherwise noted):

Items	Test conditions		Symbol	SS12A	SS13A~ SS14A	SS15A~ SS16A	SS18A~ SS110A	SS115A~ SS120A	Unit
Instantaneous forward voltage	IF=1.0A(2)		VF	0.50	0.55	0.70	0.85	0.95	V
Reverse current	VR=VDC	Tj=25℃	IR	0.5					mA
		Tj=100℃		5.0
Note 2: Pulse test:300μs pulse width,1% duty cycle.

Schottky Barrier Diode SS12A Diode Dimensions:

Schottky Barrier Diode SS12A Notice:

Product is intended for use in general electronics applications.
Product should be worked less than the ratings; if exceeded, may cause permanent damage,or introduce latent failure mechanisms.
The absolute maximum ratings are rated values and must not be exceeded during operation. The following are the general derating methods you design a circuit with a device.

I_F(AV) : We recommend that the worst case current be no greater than 80% .

I_FSM : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which the general during the lifespan of the device.

T_J : Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a T_J of below 100℃.