IMZC120R012M2HXKSA1
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Brand:
Infineon Technologies
Product Description
Typical Applications
- Very low switching losses.
- Overload operation up to T<sub>vj</sub> = 200°C.
- Short-circuit withstand time of 2 µs.
- Robust body diode for hard commutation.
- XT interconnection technology for enhanced thermal performance.
The IMZC120R012M2H is a 1200 V, 12 mΩ N-channel silicon carbide (SiC) MOSFET from Infineon Technologies, designed for high-efficiency and high-power-density applications.
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Company
Shikun Electronics Co., Ltd
Location
14th Floor, Sanda Building, No. 46, Huafa North Road, Licun Community, Huaqiangbei Street, Futian District, Shenzhen
Contact Person
Rock lin